Vol. 23 No. 1 (2020) Cover Image
Vol. 23 No. 1 (2020)

Published: March 31, 2020

Pages: 21-29

Articles

Impact of changing channel length and band gaps of a carbon nanotube on the current of a Carbon Nanotube Field Effect Transistors (CNTFETs)

Abstract

This paper introduce a new way to simulate the effect of changing the length and the band gap of the nanotube on the current of carbon nanotube field effect transistors (CNTFET( by using simulation tools: FETToy, CNTFET lab, CNT bands 2.0, since this simulation were done in different parameters of ZigZag nanotube. We use three simulations tools because each tool provides simulation of parameters that differ from the parameters of other tools, so we can study more parameters that we change which this article is studied._x000D_ In this paper we studied the effect of changing of ZigZag nanotube length which has a chirality (n,0) on the current of the CNTFET. We have found that the relationship between nanotube length and the current of the CNTFET is an inverse proportional, as the nanotube length increase, the current of CNTFET decrease, and the relation between the band gap of the ZigZag nanotube and current of the CNTFET has been studied too. We have found that this relationship is an inverse proportional, as the band gap increase, the current of CNTFET decrease. Also, we studied the relation between the band gap of the ZigZag nanotube and the average velocity of charges in CNTFET, we found that relationship is an inverse proportional, as the band gap increase, the average velocity of charges of CNTFET decrease. 

References

  1. Yoshinori Ando, “Carbon Nanotube: Story in Ando Laboratory”, Journal of Siberian Federal University. Mathematics & Physics, 3(1), 3-22, 2010. https://core.ac.uk/download/pdf/38633186.pdf
  2. Veski Dabas and Surender Kumar Grewal, “To Design a Low Power CNTFET Based XOR Gate”, Deenbandhu Chhottu Ram University of Science and Technology, Murthal, Haryana, India, Journal of VLSI Design Tools & Technology, ISSN: 2321- 6492 (Print) Volume 8, 2018.
  3. Ahmad Aqel, Kholoud M.M. Abou El-Nour, “Carbon nanotubes, science and technology part (I) structure, synthesis and characterization”, Arabian Journal of Chemistry, Volume 5, Issue 1, Pages 1-23, January 2012.
  4. S. B. Sinnott & R. Andreys, “Carbon Nanotubes: Synthesis, Properties, and Applications” , Critical Reviews in Solid State and Materials Sciences. 26 (3): 145–249, 2001.
  5. خضر بشور ، د. مجد الدين العلي ، د. عيد العبود ، "دراسة تأثير تغير معاملات توجيه الأنبوب النانوي على خصائصه"، مجلة جامعة البعث، المجلد رقم 41، 2019.
  6. Akshay Verma, Harshul Gupta and Nitin Chaturvedi, “Analysis of the Operational Characteristics of CNTFET”. Birla Institute of Technology and Science, Pilani, Rajasthan, India, , International Journal of Enhanced Research in Science Technology & Engineering, ISSN: 2319-7463, 2014.
  7. Jia Choi and Yong Zhang, “Single, Double, MultiWall Carbon Nanotube Properties & Applications” , 2012.
  8. https://www.sigmaaldrich.com/technical-documents/articles/materials-science/single-double-multi-walled-carbon-nanotubes.html
  9. Imran Khan and Shengli Huang and Chenxu Wu “Multi-walled carbon nanotube structural instability with/without metal nanoparticles under electron beam irradiation”, New J. Phys. 19 123016, 2017.
  10. K. Liu, W. Wang, Z. Xu, X. Bai, E. Wang, Y. Yao, J. Zhang, Z. Liu, Journal of American Chemical Society, 131, 62-63, 2008.
  11. Y. Piao, C. Chen, A. A. Green, H. Kwon, M. C. Hersam, C. S. Lee, G. C. Schatz, Y. Wang, Journal of Physical Chemistry Letters, 2, 1577-1582, 2011.
  12. Y. Tison, C. E. Giusca, V. Stolojan, Y. Hayash, S. R. P. Silva, Advanced Materials, 20, 189-194, 2008.
  13. A. A. Green, M. C. Hersam, ACS Nano, 5, 1459–1467, 2011.
  14. Hasina F. Huq and Bashirul Polash and Oscar Machado and Nora Espinoza, “Study of Carbon NanoTube Field Effect Transistors for NEMS”,The University of Texas-Pan American, The University of Texas El Paso USA, 2010.